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Resolution: standard / high Figure 4.
Characteristics for a GR-FET GHz detector. (a) Basic two-terminal metal contact. (b) Gate voltage dependence for a bilayer GR-FET at room temperature with observable
Dirac point.
Mahjoub et al. Nanoscale Research Letters 2013 8:22 doi:10.1186/1556-276X-8-22 |
