GR-FET application for high-frequency detection device
1 Graduate School of Advanced Integration Science, Chiba University, Chiba, 263-8522, Japan
2 Department of Chemistry, University of Minnesota Twin Cities, Minneapolis, MN, 55455-0431, USA
3 Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-1920, USA
4 Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287-5706, USA
5 Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama, 351-0198, Japan
Nanoscale Research Letters 2013, 8:22 doi:10.1186/1556-276X-8-22Published: 10 January 2013
A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.