Open Access Nano Idea

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Jie Li12, Hao Guo12, Jun Liu12, Jun Tang12*, Haiqiao Ni3, Yunbo Shi12, Chenyang Xue12, Zhichuan Niu3, Wendong Zhang12, Mifeng Li3 and Ying Yu3

Author affiliations

1 Key Laboratory of Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Shanxi, 030051, China

2 Science and Technology on Electronic Test & Measurement Laboratory, North University of China, Taiyuan, Shanxi, 030051, China

3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

For all author emails, please log on.

Citation and License

Nanoscale Research Letters 2013, 8:218  doi:10.1186/1556-276X-8-218

Published: 8 May 2013

Abstract

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10−9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

Keywords:
RTD epitaxy on Si; Strain gauge; Highly sensitive; Piezoresistive coefficient