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GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Jie Li12, Hao Guo12, Jun Liu12, Jun Tang12*, Haiqiao Ni3, Yunbo Shi12, Chenyang Xue12, Zhichuan Niu3, Wendong Zhang12, Mifeng Li3 and Ying Yu3

Author affiliations

1 Key Laboratory of Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Shanxi, 030051, China

2 Science and Technology on Electronic Test & Measurement Laboratory, North University of China, Taiyuan, Shanxi, 030051, China

3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

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Citation and License

Nanoscale Research Letters 2013, 8:218  doi:10.1186/1556-276X-8-218

Published: 8 May 2013


As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10−9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

RTD epitaxy on Si; Strain gauge; Highly sensitive; Piezoresistive coefficient