GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
1 Key Laboratory of Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Shanxi, 030051, China
2 Science and Technology on Electronic Test & Measurement Laboratory, North University of China, Taiyuan, Shanxi, 030051, China
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
Citation and License
Nanoscale Research Letters 2013, 8:218 doi:10.1186/1556-276X-8-218Published: 8 May 2013
As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10−9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.