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Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

Andrew Yakimov*, Victor Kirienko, Vladislav Armbrister and Anatolii Dvurechenskii

Author Affiliations

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Prospekt Lavrent’eva 13, Novosibirsk 630090, Russia

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Nanoscale Research Letters 2013, 8:217  doi:10.1186/1556-276X-8-217

Published: 8 May 2013


We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage.

Quantum dots; Silicon; Germanium; Interband transitions; Infrared photodetectors