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Dot size effects of nanocrystalline germanium on charging dynamics of memory devices

Ling-Feng Mao

Author Affiliations

Institute of Intelligent Structure and System, School of Urban Rail Transportation, Soochow University, Suzhou, 215006, China

Nanoscale Research Letters 2013, 8:21  doi:10.1186/1556-276X-8-21

Published: 10 January 2013


The dot size of nanocrystalline germanium (NC Ge) which impacts on the charging dynamics of memory devices has been theoretically investigated. The calculations demonstrate that the charge stored in the NC Ge layer and the charging current at a given oxide voltage depend on the dot size especially on a few nanometers. They have also been found to obey the tendency of initial increase, then saturation, and lastly, decrease with increasing dot size at any given charging time, which is caused by a compromise between the effects of the lowest conduction states and the capacitance of NC Ge layer on the tunneling. The experimental data from literature have also been used to compare and validate the theoretical analysis.

Quantum size; Nanocrystalline; Tunneling; Memory devices; 85.30.Tv; 85.35.-p; 73.63.-b