Table 1

Oxidation-nitridation conditions for Si wafer
Condition Value
Pressure (Torr) 760
O2 concentration (%) 1
He flow rate (slm) 10
O2 flow rate (sccm) 100
N2 flow rate (sccm) 1,10, and 100
VHF (MHz) 150
VHF power (W) 1,000 to 1,500
Plasma gap (mm) 0.8 to 1
Substrate temperature (°C) 400
Oxidation-nitridation time (min) 9 to 25

Zhuo et al.

Zhuo et al. Nanoscale Research Letters 2013 8:201   doi:10.1186/1556-276X-8-201

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