Figure 6.

HF and QS C-V curves for Al/SiOx Ny /Si MOS capacitors (before annealing) utilizing SiOx Ny layers. The layers were prepared under N2/O2 gas flow ratios of 0.01, 0.1, and 1.

Zhuo et al. Nanoscale Research Letters 2013 8:201   doi:10.1186/1556-276X-8-201
Download authors' original image