Figure 5.

Typical HF C V curves for Al/SiOx Ny /Si capacitors utilizing SiOx Ny layers prepared by different N2 /O2 flow ratios. The CV curve shifts to a negative gate bias direction with increasing N2/O2 ratio.

Zhuo et al. Nanoscale Research Letters 2013 8:201   doi:10.1186/1556-276X-8-201
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