Figure 3.

XPS spectra in Si 2p region for SiOx Ny layer formed by 1% O2 /He AP plasma oxidation-nitridation. The process is at 400°C for 9 min with a N2/O2 gas flow ratio of 0.1. (a) As-grown sample. (b) Annealed sample.

Zhuo et al. Nanoscale Research Letters 2013 8:201   doi:10.1186/1556-276X-8-201
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