Figure 1.

Schematic of the SiNW fabrication process. (a) Depositing an Al film on the SiO2/Si substrate. (b) Anodization of the Al film to form AAO mask. (c) Excavating the barrier layer and SiO2 layer as well as patterning the Si surface by ICP etching. (d) Removal of the AAO/SiO2 layer to achieve patterned Si substrate. (e) Depositing a Au film on patterned Si substrate. (f) Metal-assisted chemical etching to obtain Si nanowire array.

Zuo et al. Nanoscale Research Letters 2013 8:193   doi:10.1186/1556-276X-8-193
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