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Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon

Zewen Zuo1*, Guanglei Cui1, Yi Shi2, Yousong Liu3 and Guangbin Ji3

Author affiliations

1 College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000, China

2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

3 College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211100, China

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Citation and License

Nanoscale Research Letters 2013, 8:193  doi:10.1186/1556-276X-8-193

Published: 26 April 2013


Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thick Au mesh in contact with the Si produces a low Au/Si Schottky barrier height, facilitating the injection of electronic holes from the Au to the Si, thus resulting in a high etching rate.

Silicon nanowires; Etching rate; Schottky barrier height; Thickness dependent