Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon
1 College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000, China
2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
3 College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211100, China
Citation and License
Nanoscale Research Letters 2013, 8:193 doi:10.1186/1556-276X-8-193Published: 26 April 2013
Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thick Au mesh in contact with the Si produces a low Au/Si Schottky barrier height, facilitating the injection of electronic holes from the Au to the Si, thus resulting in a high etching rate.