Figure 2.

STEM and EDX images of 50-nm Ge QDs formed after thermal oxidation of Si0.85Ge0.15 pillars. Si0.85Ge0.15 pillars with a diameter of 100 nm were thermally oxidized at 900°C for (a) 60 and (b) 90 min.

Wang et al. Nanoscale Research Letters 2013 8:192   doi:10.1186/1556-276X-8-192
Download authors' original image