Figure 4.

The photoelectric performance measurement. (a) The current-voltage characteristics of the single PbTe/Pb nanostructure before and after laser irradiation at 300 K a Without light irradiation; b under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation; and c restoration without light irradiation again. (b) The current-voltage characteristics of PbTe/Pb nanostructure arrays before and after assembling the ZnxMn1−xS nanoparticles at 300 K. The lower right insert figure gives the optical micrograph of the PbTe/Pb array device with molybdenum electrodes. d Without light irradiation; e under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation; f combined a spot of ZnxMn1−xS nanoparticles under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation; and g combined sufficient ZnxMn1−xS nanoparticles under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation.

Zong et al. Nanoscale Research Letters 2013 8:191   doi:10.1186/1556-276X-8-191
Download authors' original image