|
Resolution: standard / high Figure 5.
Threshold voltage and drive current degradation and structural model. (a) Threshold voltage shift and current drive degradation as a function of stress time
for high-κ Er2O3 and Er2TiO5 a-IGZO TFT devices. Structural model of the (b) Er2O3 surface and (c) Er2TiO5 surface.
Chen et al. Nanoscale Research Letters 2013 8:18 doi:10.1186/1556-276X-8-18 |
