Figure 4.

Transfer and output characteristics. Transfer characteristics (IDS-VGS) (a) and output characteristics (IDS-VDS) (b) of high-κ Er2O3 and Er2TiO5 a-IGZO TFT devices.

Chen et al. Nanoscale Research Letters 2013 8:18   doi:10.1186/1556-276X-8-18
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