Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

Nano Express

Structural and electrical characteristics of high-κ Er₂O₃ and Er₂TiO₅ gate dielectrics for a-IGZO thin-film transistors

Fa-Hsyang Chen, Jim-Long Her, Yu-Hsuan Shao, Yasuhiro H Matsuda and Tung-Ming Pan^*

Nanoscale Research Letters 2013, 8:18 doi:10.1186/1556-276X-8-18

No comments have yet been made on this article.