Figure 7.

Temperature dependences of voltage and temperature coefficient of signal. Temperature dependences of voltage are presented for fixed currents through a Ni silicide/poly-Si Schottky diode and temperature coefficient of signal (voltage) is plotted for each branch of I-V characteristics. (a) Forward and (b) reverse biases (the legends represent the currents in μA for each line). (c, d) Temperature coefficient of voltage for each branch of I-V characteristics vs. fixed current through the structure. To derive the graph (d), the curves in (b) were linearized in the interval from 20℃ to 60℃. Negative and positive values of I in (c) and (d) correspond to forward and reverse biases, respectively.

Chizh et al. Nanoscale Research Letters 2013 8:177   doi:10.1186/1556-276X-8-177
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