Figure 6.

Temperature dependences of current and temperature coefficient of signal. Temperature dependences of current are presented for fixed voltages on a Ni silicide/poly-Si Schottky diode and temperature coefficient of signal (current) is plotted for each branch of the I-V characteristics. (a) Forward and (b) reverse currents (the legend represents the applied bias in volts for each line). (c) Temperature coefficient of current vs. fixed voltage on the structure; negative and positive values of U in (c) correspond to forward and reverse biases, respectively.

Chizh et al. Nanoscale Research Letters 2013 8:177   doi:10.1186/1556-276X-8-177
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