Figure 6.

Ohmic current–voltage characteristics of TLM structures. These TLM structures (see inset scale bar 1 μm) are prepared on (a) as-grown, (b) as-grown and annealed, and (c) Zn-implanted and annealed GaAs nanowires. The second inset shows the I-V curves of (a) and (b) in a more adequate current scale. Reprinted with permission from Kanungo et al. [17].

Li et al. Nanoscale Research Letters 2013 8:175   doi:10.1186/1556-276X-8-175
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