Figure 4.

FESEM images of bubbles formed at 50-keV Ga+ implantation on GaN nanowires. The fluence was 2 × 1020 ions/m2. Inset shows a large bubble with a diameter of approximately 200 nm. Reprinted with permission from Dhara et al. [27].

Li et al. Nanoscale Research Letters 2013 8:175   doi:10.1186/1556-276X-8-175
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