Figure 2.

Dark-field TEM images of GaAs nanowires after implantation and annealing. (a) Zn implantation and (b) subsequent annealing at 800°C under arsenic overpressure. The insets in (a) show two corresponding diffraction patterns of selected areas, whereas the diffraction pattern in (b) is taken from the annealed nanowires. Reprinted with permission from Stichtenoth et al. [17].

Li et al. Nanoscale Research Letters 2013 8:175   doi:10.1186/1556-276X-8-175
Download authors' original image