Figure 2.

Analysis of the core-level spectra for the clean Ga-rich GaAs(001)-4 × 6 surface. (a) As 3d state, θe = 0°, (b) As 3d state, θe = 60°, (c) Ga 3d state, θe = 0°, and (d) Ga 3d state, θe = 60°.

Pi et al. Nanoscale Research Letters 2013 8:169   doi:10.1186/1556-276X-8-169
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