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Resistive phase transition of the superconducting Si(111)-( 7 × 3 )-In surface

Takashi Uchihashi*, Puneet Mishra and Tomonobu Nakayama

Author Affiliations

International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), , 1–1, Namiki, Tsukuba, Ibaraki, 305–0044, Japan

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Nanoscale Research Letters 2013, 8:167  doi:10.1186/1556-276X-8-167

Published: 11 April 2013


Recently, superconductivity was found on semiconductor surface reconstructions induced by metal adatoms, promising a new field of research where superconductors can be studied from the atomic level. Here we measure the electron transport properties of the Si(111)-(<a onClick="popup('http://www.nanoscalereslett.com/content/8/1/167/mathml/M2','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/8/1/167/mathml/M2">View MathML</a>)-In surface near the resistive phase transition and analyze the data in terms of theories of two-dimensional (2D) superconductors. In the normal state, the sheet resistances (2D resistivities) R of the samples decrease significantly between 20 and 5 K, suggesting the importance of the electron-electron scattering in electron transport phenomena. The decrease in R is progressively accelerated just above the transition temperature (Tc) due to the direct (Aslamazov-Larkin term) and the indirect (Maki-Thompson term) superconducting fluctuation effects. A minute but finite resistance tail is found below Tc down to the lowest temperature of 1.8 K, which may be ascribed to a dissipation due to free vortex flow. The present study lays the ground for a future research aiming to find new superconductors in this class of materials.

Surface reconstruction; Silicon; Indium; Superconductivity; Electron transport; Fluctuation effects; Vortex flow