Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching
1 Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, No.415, Chien Kung Road, Kaohsiung, 807, Taiwan
2 Department of Electronics Engineering, National United University, No.1, Lienda, Miaoli 360, Taiwan
Nanoscale Research Letters 2013, 8:156 doi:10.1186/1556-276X-8-156Published: 8 April 2013
Cu nano-particles (Cu-NPs) were embedded into the SiO2 layer of a Cu/SiO2/Pt structure to examine their influence on resistive switching characteristics. The device showed a reversible resistive switching behavior, which was due to the formation and rupture of a Cu-conducting filament with an electrochemical reaction. The Cu-NPs enhanced the local electric field within the SiO2 layer, which caused a decrease in the forming voltage. During successive switching processes, the Cu-NP was partially dissolved, which changed its shape. Therefore, the switching voltages were not reduced. Moreover, the Cu-NPs caused a non-uniform Cu concentration within the SiO2 layer; thus, the Cu-conducting filament should be formed in a high Cu concentration region, which improves switching dispersion. The Cu-NPs within the SiO2 layer stabilize the resistive switching, resulting in a larger switching window and better endurance characteristics.