SEM images of films with different thicknesses and annealing temperatures and corresponding etching results. (a) The 11-nm-thick Ag film on Si substrate annealed at 120°C for 10 min. (b) The 12-nm-thick Ag film on Si substrate annealed at 160°C for 10 min. (c) The 13-nm-thick Ag film on Si substrate annealed at 175°C for 10 min. Planar and cross-sectional images of their corresponding etched substrate: (d, g) corresponding to (a), (e, h) corresponding to (b), and (f, i) corresponding to (c).
Liu et al. Nanoscale Research Letters 2013 8:155 doi:10.1186/1556-276X-8-155