Bi-stable resistive switching characteristics in Ti-doped ZnO thin films
School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
Nanoscale Research Letters 2013, 8:154 doi:10.1186/1556-276X-8-154Published: 4 April 2013
Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High ROFF/RON ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.