AFM images to demonstrate metal-assisted patterning of Ge(100) surfaces in water. In the left column, experimental conditions are schematically depicted. (a), (c), (e) are the initial Ge surfaces before scans. (b) Image after ten scans of 1.0 × 1.0 μm2 central area in air with Si cantilever. (d) Image after scans in saturated dissolved-oxygen water (SOW) with Si cantilever. (f) Image after ten scans in SOW with Pt-coated cantilever. In (b), (d), and (f), the pressing force was set to 3 nN.
Kawase et al. Nanoscale Research Letters 2013 8:151 doi:10.1186/1556-276X-8-151