Figure 8.

Comparison of etching results on monocrystalline quartz and amorphous SiO2. (a) No difference between covered surface and exposed surface on monocrystalline quartz after etching for 4 h at 293 K. (b) Exposed surface of amorphous SiO2 was etched evidently at 293 K.

Song et al. Nanoscale Research Letters 2013 8:140   doi:10.1186/1556-276X-8-140
Download authors' original image