Cross-sectional micrographs of SML exposed at 30 keV on 300- to 330-nm-thick resist. Achievable line width and pitch (a, b) 36- to 40-nm gaps in 150-nm pitch, (c, d) 33- to 40-nm gaps in 100-nm pitch, and (e, f) 30-nm sidewall in 70-nm pitch, yielding an approximate AR of 9:1 in all cases. The development procedure is identical to that in Figure 5. The resist was cleaved and coated with a 6-nm Cr layer before imaging.
Mohammad et al. Nanoscale Research Letters 2013 8:139 doi:10.1186/1556-276X-8-139