Open Access Nano Express

SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

Mohammad Ali Mohammad1*, Steven K Dew1 and Maria Stepanova12

1 Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, T6G 2V4, Canada

2 National Institute for Nanotechnology NRC, 11421 Saskatchewan Drive, Edmonton, Alberta, T6G 2M9, Canada

For all author emails, please log on.

Nanoscale Research Letters 2013, 8:139  doi:10.1186/1556-276X-8-139

Published: 27 March 2013

Additional files

Additional file 1: Figure A1:

SML (a) contrast curves, and (b) clearance dose trends for various voltages and developers. The developers used are MIBK:IPA 1:3 (filled symbols) and IPA:Water 7:3 (open symbols), for 20 sec each, showing (a) contrast curves at 10 keV (triangles) and 30 keV (circles), and (b) clearance dose vs. voltage (squares). The data has been acquired through optical profilometry (Zygo NewView 5000).

Format: PDF Size: 39KB Download file

This file can be viewed with: Adobe Acrobat Reader

Open Data

Additional file 2: Table T1:

Comparison of contrast weighted sensitivity of various resists.

Format: XLS Size: 31KB Download file

This file can be viewed with: Microsoft Excel Viewer

Open Data

Additional file 3: Figures A2 and A3:

Figure A2. Adverse effects of SEM imaging on SML resist. The panels show (a) swelling and tearing of resist upon low magnification scan, and (b) bending of grating patterns after high magnification scan from center of the same grating patterns. Figure A3. Shrinking of SML resist surface due to SEM imaging. The panels show the micrographs (a) after first scan at low magnification, and (b) after second scan at high magnification. Observe the unexposed surfaces alongside the grating patterns.

Format: PDF Size: 106KB Download file

This file can be viewed with: Adobe Acrobat Reader

Open Data