Figure 4.

Current density versus voltage measurements. They are under dark (filled symbols) or white light (empty symbols) conditions, in devices containing (a) 12- or (b) 2-nm a-Ge QWs. The used metal-insulator-semiconductor configuration is drawn in the figure.

Cosentino et al. Nanoscale Research Letters 2013 8:128   doi:10.1186/1556-276X-8-128
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