Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up technique
1 SiNaPS Laboratory SP2M, UMR-E CEA/UJF-Grenoble 1, CEA/INAC, 17 Avenue des Martyrs, Grenoble 38054, France
2 CNRS/LTM, 17 Avenue des Martyrs, Grenoble 38054, France
3 CEA/INAC/SP2M/Lemma, 17 Avenue des Martyrs, Grenoble 38054, France
4 LMGP, Grenoble INP-Minatec, 3 Parvis Louis Néel, Grenoble 38016, France
5 UJF/IUT-1, 17 Quai Claude Bernard, Grenoble 38000, France
Nanoscale Research Letters 2013, 8:123 doi:10.1186/1556-276X-8-123Published: 9 March 2013
The production and characterization of ultradense, planarized, and organized silicon nanowire arrays with good crystalline and optical properties are reported. First, alumina templates are used to grow silicon nanowires whose height, diameter, and density are easily controlled by adjusting the structural parameters of the template. Then, post-processing using standard microelectronic techniques enables the production of high-density silicon nanowire matrices featuring a remarkably flat overall surface. Different geometries are then possible for various applications. Structural analysis using synchrotron X-ray diffraction reveals the good crystallinity of the nanowires and their long-range periodicity resulting from their high-density organization. Transmission electron microscopy also shows that the nanowires can grow on nonpreferential substrate, enabling the use of this technique with universal substrates. The good geometry control of the array also results in a strong optical absorption which is interesting for their use in nanowire-based optical sensors or similar devices.