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Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer

Shan Zheng, Qing-Qing Sun*, Wen Yang, Peng Zhou*, Hong-Liang Lu and David Wei Zhang

Author Affiliations

State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China

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Nanoscale Research Letters 2013, 8:116  doi:10.1186/1556-276X-8-116

Published: 2 March 2013


Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al2O3 layer between metal and SiC to solve this problem simply but effectively. The Al2O3/n-SiC interface composition was obtained with X-ray photoemission spectroscopy, and the electrical properties of subsequently deposited metal contacts were characterized by current–voltage method. We can clearly demonstrate that the insertion of Al2O3 interfacial layer can modulate the current density effectively and realize the transfer between the Schottky contact and ohmic contact.

Contact resistance; Schottky barrier height; SiC; Atomic layer deposition