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Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

Xianqi Wei*, Ranran Zhao, Minghui Shao, Xijin Xu* and Jinzhao Huang

Author Affiliations

School of Physics and Technology, University of Jinan, 250022, Jinan, People's Republic of China

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Nanoscale Research Letters 2013, 8:112  doi:10.1186/1556-276X-8-112

Published: 28 February 2013


Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

PLD; ZnO thin films; GaN buffer layer; Crystal structure; Optical properties