Figure 6.

Gate leakage current and P-F conduction fitting and F-N tunneling fitting. (a) Gate leakage current of the TiO2/Al2O3/epi-GaAs structure for doped and undoped samples. (b) P-F conduction fitting and F-N tunneling fitting of I-V characteristics for different samples.

Dalapati et al. Nanoscale Research Letters 2012 7:99   doi:10.1186/1556-276X-7-99
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