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Resolution: standard / high Figure 5.
Frequency dispersion characteristics of the TiO2/Al2O3/epi-GaAs structure. (a) Zn-doped epi-GaAs with a doping concentration of 1017 cm-3 and (b) Zn-doped epi-GaAs with a doping concentration of 1018 cm-3.
Dalapati et al. Nanoscale Research Letters 2012 7:99 doi:10.1186/1556-276X-7-99 |
