Figure 5.

Frequency dispersion characteristics of the TiO2/Al2O3/epi-GaAs structure. (a) Zn-doped epi-GaAs with a doping concentration of 1017 cm-3 and (b) Zn-doped epi-GaAs with a doping concentration of 1018 cm-3.

Dalapati et al. Nanoscale Research Letters 2012 7:99   doi:10.1186/1556-276X-7-99
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