Figure 3.

ToF-SIMS depth profile of elements Ti, Al, AlO, TiO, O, Ga, and As. These are the depth profile of the elements of the ALD TiO2/Al2O3 dielectric stack on doped (1017 to 1018 cm-3) and undoped epi-GaAs structures.

Dalapati et al. Nanoscale Research Letters 2012 7:99   doi:10.1186/1556-276X-7-99
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