Figure 2.

ToF-SIMS profiles of Ga, As, Al, and Ge atom concentration. These are the profiles for the epitaxial GaAs layer grown at high temperature on a Ge substrate with and without the AlAs diffusion barrier. The figure shows that the AlAs barrier layer can restrict the Ge diffusion for GaAs/Ge epitaxy.

Dalapati et al. Nanoscale Research Letters 2012 7:99   doi:10.1186/1556-276X-7-99
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