Figure 1.

AFM images (10 × 10 μm2) for epitaxial GaAs on Ge structures. (a) Undoped epi-GaAs and Zn-doped epi-GaAs with doping densities of (b) 1 × 1017 cm-3, (c) 1 × 1018 cm-3, and (d) 1 × 1019 cm-3. The rms surface roughness of the structures determined from AFM is (a) 4.0 nm, (b) 4.7 nm, (c) 4.4 nm, and (d) 4.6 nm.

Dalapati et al. Nanoscale Research Letters 2012 7:99   doi:10.1186/1556-276X-7-99
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