Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

Goutam K Dalapati; Terence K Shun Wong; Yang Li; Ching K Chia; Anindita Das; Chandreswar Mahata; Han Gao; Sanatan Chattopadhyay; Manippady K Kumar; Hwee L Seng; Chinmay K Maiti; Dong Z Chi

doi:10.1186/1556-276X-7-99

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Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO₂/Al₂O₃gate stack: study of Ge auto-doping and p-type Zn doping

Goutam K Dalapati^*, Terence K Shun Wong, Yang Li, Ching K Chia, Anindita Das, Chandreswar Mahata, Han Gao, Sanatan Chattopadhyay, Manippady K Kumar, Hwee L Seng, Chinmay K Maiti and Dong Z Chi

* Corresponding author: Goutam K Dalapati dalapatig@imre.a-star.edu.sg

Nanoscale Research Letters 2012, 7:99 doi:10.1186/1556-276X-7-99

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Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO₂/Al₂O₃gate stack: study of Ge auto-doping and p-type Zn doping

Nanoscale Research Letters

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Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO₂/Al₂O₃gate stack: study of Ge auto-doping and p-type Zn doping