Figure 6.

Electric field distribution. Comparison of the electric field distribution at the depletion region close to the surface of the 4H-SiC of different work functions using Tung's model. The inset represents the electric field distribution as a function of the size of the NPs.

Kang et al. Nanoscale Research Letters 2012 7:75   doi:10.1186/1556-276X-7-75
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