Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
- Equal contributors
1 Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul, 139-701, South Korea
2 Department of Mathematics and Information, Kyungwon Campus, Gachon University, Seongnam, 461-701, South Korea
Citation and License
Nanoscale Research Letters 2012, 7:75 doi:10.1186/1556-276X-7-75Published: 13 January 2012
Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively. The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.