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Open Access Nano Express

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Aihua Zhong and Kazuhiro Hane*

Author affiliations

Department of Nanomechanics, Tohoku University, Sendai, 980-8579, Japan

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Citation and License

Nanoscale Research Letters 2012, 7:686  doi:10.1186/1556-276X-7-686

Published: 27 December 2012

Abstract

GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.

Keywords:
GaN nanowall network; GaN growth on Si substrate; Porous GaN; Hall measurement; N/Ga ratio; TEM