Nano Express
Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
Author affiliations
Department of Nanomechanics, Tohoku University, Sendai, 980-8579, Japan
Citation and License
Nanoscale Research Letters 2012, 7:686 doi:10.1186/1556-276X-7-686
Published: 27 December 2012Abstract
GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam
epitaxy. GaN nanowalls overlap and interlace with one another, together with large
numbers of holes, forming a continuous porous GaN nanowall network. The width of the
GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio.
Characterization results of a transmission electron microscope and X-ray diffraction
show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of
room temperature photoluminescence, indicating that the GaN nanowall network is of
high quality. The sheet resistance of the Si-doped GaN nanowall network along the
lateral direction was 58 Ω/
. The conductive porous nanowall network can be useful for integrated gas sensors
due to the large surface area-to-volume ratio and electrical conductivity along the
lateral direction by combining with Si micromachining.
