Figure 5.

Carrier density profiles and location of active As atoms in NW devices. Equidensity surfaces (blue and green surfaces) and dopant positions (yellow dots) for (a) continuously doped, (b) high-current (red dashed line in Figure 4), (c) medium-current (green dashed line in Figure 4), and (d) low-current (blue dashed line in Figure 4) devices. Vd = Vg = 0.5 V.

Uematsu et al. Nanoscale Research Letters 2012 7:685   doi:10.1186/1556-276X-7-685
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