Carrier density profiles and location of active As atoms in NW devices. Equidensity surfaces (blue and green surfaces) and dopant positions (yellow dots) for (a) continuously doped, (b) high-current (red dashed line in Figure 4), (c) medium-current (green dashed line in Figure 4), and (d) low-current (blue dashed line in Figure 4) devices. Vd = Vg = 0.5 V.
Uematsu et al. Nanoscale Research Letters 2012 7:685 doi:10.1186/1556-276X-7-685