Figure 4.

Id-Vgcharacteristics of GAA Si NW transistors atVd= 0.5 V. Gray lines show the Id-Vg of 100 samples with different discrete As distributions. Open circles represent their average value 〈Id〉. The continuously doping case with Nd = 3 × 1020 cm−3 in the S/D extensions is shown by solid circles for comparison.

Uematsu et al. Nanoscale Research Letters 2012 7:685   doi:10.1186/1556-276X-7-685
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