Figure 3.
Histogram of the number of active As atoms in the Si NWs. Si NWs (3 nm wide, 3 nm high, and 10 nm long) with 1-nm-thick oxide are implanted
with As (0.5 keV, 1 × 1015 cm−2) and annealed at 1,000°C with a hold time of 0 s. Two hundred different random seeds
were calculated.
Uematsu et al. Nanoscale Research Letters 2012 7:685 doi:10.1186/1556-276X-7-685 |
