Table 1

Turn-on fields and field enhancement factors for the growth of the ITO NWs at different conditions
Eon(V μm−1) at J = 0.01 mA cm−2 β
Flat 10-h growth 18 429
Patterned 10-h growth 13.6 699
Flat 3-h growth 9.3 1,621
Patterned 3-h growth 6.6 1,857

Chang et al.

Chang et al. Nanoscale Research Letters 2012 7:684   doi:10.1186/1556-276X-7-684

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