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Table 1
Turn-on fields and field enhancement factors for the growth of the ITO NWs at different conditions
	E_on(V μm⁻¹) at J = 0.01 mA cm⁻²	β
Flat 10-h growth	18	429
Patterned 10-h growth	13.6	699
Flat 3-h growth	9.3	1,621
Patterned 3-h growth	6.6	1,857

Chang et al. Nanoscale Research Letters 2012 7:684 doi:10.1186/1556-276X-7-684

Table 1