Sn-doped In2O3 nanowires: enhancement of electrical field emission by a selective area growth
Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd., Hsinchu, 30013, Taiwan
Nanoscale Research Letters 2012, 7:684 doi:10.1186/1556-276X-7-684Published: 21 December 2012
Selective area growth of single crystalline Sn-doped In2O3 (ITO) nanowires synthesized via vapor–liquid–solid (VLS) method at 600°C was applied to improve the field emission behavior owing to the reduction of screen effect. The enhanced field emission performance reveals the reduction of turn-on fields from 9.3 to 6.6 V μm−1 with increase of field enhancement factors (β) from 1,621 to 1,857 after the selective area growth at 3 h. Moreover, we find that the screen effect also highly depends on the length of nanowires on the field emission performance. Consequently, the turn-on fields increase from 6.6 to 13.6 V μm−1 with decreasing β values from 1,857 to 699 after the 10-h growth. The detailed screen effect in terms of electrical potential and NW density are investigated in details. The findings provide an effective way of improving the field emission properties for nanodevice application.