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Resolution: standard / high Figure 4.
The current–voltage behavior of the graphene/Si transistor. (a) Gate current, Ig, versus gate voltage, Vg, behavior of the graphene/Si transistor and (b) the source-drain current, Ids, versus the source-drain voltage, Vds, with different gate voltages.
Ma et al. Nanoscale Research Letters 2012 7:677 doi:10.1186/1556-276X-7-677 |
