Table 1
Elementary component of Cu, In, Ga, and Se in the as-grown CIGS nanopore films
Deposition time(s)	Cu (at.%)	In (at.%)	Ga (at.%)	Se (at.% )
30	44.44	-	-	55.56
90	29.29	17.54	-	53.17
600	26.80	14.39	5.02	53.79
1,200	24.24	23.79	6.51	45.46

Li et al. Nanoscale Research Letters 2012 7:675   doi:10.1186/1556-276X-7-675