Table 1

Elementary component of Cu, In, Ga, and Se in the as-grown CIGS nanopore films
Deposition time(s) Cu (at.%) In (at.%) Ga (at.%) Se (at.% )
30 44.44 - - 55.56
90 29.29 17.54 - 53.17
600 26.80 14.39 5.02 53.79
1,200 24.24 23.79 6.51 45.46

Li et al.

Li et al. Nanoscale Research Letters 2012 7:675   doi:10.1186/1556-276X-7-675

Open Data